SK hynix said its 8 Gigabit Lower Power Double Date Rate 4 (LPDDR4) mobile DRAM is built on the 1anm node, using extreme ultraviolet (EUV) lithography technology.
SK hynix said late on Friday that it received unconditional clearance from the European Commission for its takeover of Intel's non-volatile memory unit.
At its investors' forum, Samsung revealed that it will apply "extreme two-stack" technology for its future NAND flash chip and that it is possible to develop a 256-layer device.
